![]() Courtesy of ETEC Corp. |
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Courtesy of IBM Corp. |
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| Electron optical component | Silicon grating | Tungsten grating on Al/Si surface | ||
| Silicon thickness ~ 800 µm, vertical sidewalls | Parallel and crystal oriented vertical sidewalls Linewidth 100 nm, pitch 500 nm | Tungsten thickness 500 nm, with vertical sidewalls |
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| Example shown: Part of miniaturized electron optical columns |
Example shown: Calibration structure for SEMs and CD-SEMs |
Example shown: Registation grid for electron beam lithography tools, exhibiting backscattered electron- and topography contrast. |
Courtesy of IBM Corp. |
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| Stencil - Mask |
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Ultra Thin Membrane - Mask (UTM-Mask) |
| smallest features 200 nm for 2.5 µm membrane thickness |
43% measured transmission measurement done by Sematech/Selete |
Courtesy of Leica |
Courtesy of Leica |
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| Character projection mask |
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Beam shaping aperture |
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| Single slit aperture |
Slit aperture array |
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| membrane thickness up to 100 µm |
membrane thickness up to 100 µm |